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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-126 package High current Complement to type BD135/137/139 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS BD136 BD138 Open emitter BD140 VCEO VEBO IC ICM IBM Pt Tj Tstg Tamb HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature BD136 BD138 BD140 GE S Open base EMIC OND TOR UC VALUE -45 -60 -100 -45 -60 -100 -5 -1.5 -2 -1 UNIT V V Open collector V A A A W ae ae ae TmbU 70ae 8 150 -65~150 -65~150 Operating ambient temperature THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS BD136 BD138 BD140 SYMBOL MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -0.5 V VBE Base-emitter voltage IC=-500mA ; VCE=-2V VCB=-30V; IE=0 -1.0 V -100 nA ICBO Collector cut-off current VCB=-30V; IE=0 Tj=125ae -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -100 nA hFE-1 DC current gain DC current gain BD136-10;BD138-10;BD140-10 BD136-16;BD138-16;BD140-16 IC=-5mA ; VCE=-2V 40 63 63 100 25 250 160 250 hFE-2 hFE-3 fT DC current gain Transition frequency IC=-150mA ; VCE=-2V IC=-500mA ; VCE=-2V IC=-50mA; VCE=-5V ;f=100MHz IN ANG CH EMIC ES OND TOR UC 160 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD136 BD138 BD140 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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